Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1991-07-16
1992-08-04
Bowler, Alyssa H.
Static information storage and retrieval
Systems using particular element
Capacitors
365174, 365182, 365145, 357 234, 357 236, G11C 1124, G11C 1140
Patent
active
051365340
ABSTRACT:
A memory cell is disclosed which comprises a filament channel transistor and a ferroelectric capacitor formed on a surface of a semiconductor substrate. The transistor comprises a substantially cylindrical channel filament which is formed substantially perpendicular to the substrate surface between the surface and the capacitor. The capacitor comprises a storage layer which can be formed of a ferroelectric material such that the memory cell is nonvolatile. The storage layer may also comprise a high dielectric material such that the memory cell is operable as a dynamic random access memory cell.
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Clark David R.
McDavid James M.
Bowler Alyssa H.
Donaldson Richard L.
Kesterson James C.
Matsil Ira S.
Texas Instruments Incorporated
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