Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1991-09-25

1996-05-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, B44C 122

Patent

active

055207707

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of introducing a reaction gas into a reaction chamber maintained at a predetermined pressure and applying at least one of a radio frequency and a microwave to activate the reaction gas to thereby process a material to be etched. According to one aspect of the invention, Cl.sub.2 is used as a main etching gas and either and inert gas or a gas having the formula C.sub.n F.sub.(2n+2) is used as an additive gas. The method produces an anisotropically etched profile and, advantageously has a high selectivity for different types of materials. Postprocessing for removing oxide films can also be dispensed with.

REFERENCES:
patent: 4713141 (1987-12-01), Tsang
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4778563 (1988-10-01), Stone
Coburn, J, Plasma-Assisted Etching, Plasma Chemistry and Processing, vol. 2, No. 1, 1982, pp. 1-7.
Fior et al, "Dry Etching Process of SiO.sub.2 With High Selectivity", Solid State Technology, Jun. 1988, pp. 42-46.
Kato et al, "26a-ZF-10; 26a-ZF-11; 26p-ZF-1; 26p-ZF-2; 26p-ZF-3; 26p-ZF-4"; Unknown.
Hess et al, "Etching of Tungsten . . . Halogen", Solid State Technology, Jun. 1988, pp. 27-36.
Hayasak et al, "High Selective . . . Reactor", Solid State Technology, Jun. 1988, pp. 37-41.

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