Method of wet etching by use of plasma etched carbonaceous masks

Details Method of wet etching by use of plasma etched carbonaceous masks Method of wet etching by use of plasma etched carbonaceous masks

1989-08-11

1991-06-11

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566611, H01L 21306

Patent

active

050229591

ABSTRACT:
A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.

REFERENCES:
patent: 4504354 (1985-03-01), George et al.
patent: 4705659 (1987-11-01), Bernstein et al.
patent: 4756964 (1988-07-01), Kincaid et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4863557 (1989-09-01), Kokaku et al.
R. J. Gambino and P. A. Leary, Selective Etching of Carbon from Silicon Surfaces, IBM Technical Disclosure Bulletin, vol. 24, No. 3, 8/1981, pp. 1527-1530.

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