Method for making a BiCMOS semiconductor device

Details Method for making a BiCMOS semiconductor device Method for making a BiCMOS semiconductor device

1988-09-15

1990-11-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 33, 437 34, 437 56, 437 57, 437 59, 437 44, 148DIG124, 148DIG9, 357 43, H01L 2172, H01L 2176, H01L 2700

Patent

active

049701746

ABSTRACT:
A method with less processing steps for making a BiCMOS semiconductor device which can be used both in high-integration, high-speed digital devices and in precise analog devices by forming within a single substrate a CMOS transistor, a metal contact emitter bipolymer transistor having the high load driving power and highly effective matching characteristics, and a polycrystalline silicon emitter bipolar transistor having a high-speed characteristic at a low current level. Said device includes a first and a second MOSFET, and a first and a second bipolar transistor on a first conductivity-type silicon substrate, wherein performing a second conductivity-type of ion-implantation for producing a first substrate region to thereon form the first MOSFET, and a third and a fourth substrate region to thereon form the first and second bipolar transistors, respectively on said substrate. The second MOSFET is subsequently formed in a second substrate region being located between the first and third substrate regions.

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