Silicon etching process

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156657, 156659, 156662, 204192E, 252 791, H01L 21306

Patent

active

040947327

ABSTRACT:
In the manufacture of semiconductor devices it is often times necessary to use photomasks. It has been found that silicon material is useful as see-through photomasks when deposited on a thin film of glass. After deposition the silicon is etched to form the mask. A suitable etchant, which may be used and which does not undercut patterned material formed over the silicon, may be derived from a composition of CCl.sub.4 + N.sub.2 + Cl.sub.2 and in some instances + HCl. This etchant may also be used in patterning polysilicon leads on various silicon devices such as charged coupled devices without undercutting of the leads.

REFERENCES:
patent: 3975252 (1976-08-01), Fraser et al.

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