Method of purifying silicon

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156622, 156624, 156DIG64, 23295R, 423348, 295276, 164 60, C01b 3302, B01j 1708

Patent

active

040947319

ABSTRACT:
A process for producing crystalline silicon having an iron concentration less than about one-twentieth of the iron concentration of the mother liquor. Iron contaminated silicon is introduced into a mold and the mold walls are maintained at a temperature sufficient to cause silicon crystalline growth. The mother liquor is agitated to wash the exposed surfaces of the growing silicon crystals and to prevent the freezing of the top surface of the mother liquor. A hollow crystalline silicon ingot is formed and both the inner zone centrally of the crystalline ingot and the outer zone adjacent to the mold wall are removed leaving an inner zone having an iron concentration less than one-twentieth of the iron concentration of the original mother liquor.

REFERENCES:
patent: 1386227 (1921-08-01), Becket
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patent: 2872299 (1959-02-01), Celmer et al.
patent: 3069240 (1962-12-01), Armand
patent: 3536123 (1970-10-01), Izumi
patent: 3543531 (1970-12-01), Adams
patent: 3871872 (1975-03-01), Downing et al.

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