Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1995-09-11
1997-06-10
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365210, G11C 1122
Patent
active
056383185
ABSTRACT:
A random access memory circuit is described which uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using reference cells to generate a reference voltage which is compared to a voltage representative of data stored on the memory cell using a multiplexed sense amplifier. In using two ferroelectric reference cells in which one contains a logical 0 polarization, and the other contains a logical 1 polarization, a single-ended reference voltage can be generated on a reference bit line. A ferroelectric memory cell can then be read by comparing the voltage on its corresponding bit line to the reference bit line using the sense amplifier. The content of the memory cell being read and the content of the reference cells can be rewritten on the same clock cycles to save on access time.
REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5010518 (1991-04-01), Toda
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5218566 (1993-06-01), Papaliolios
patent: 5254482 (1993-10-01), Fisch
patent: 5297077 (1994-03-01), Imai et al.
patent: 5305273 (1994-04-01), Jinbo
patent: 5424975 (1995-06-01), Lowrey et al.
patent: 5432731 (1995-07-01), Kirsch et al.
patent: 5487029 (1996-01-01), Kuroda
Wayne Kinney et al., "Memory Applications of Integrated Ferroelectric Technology," Digest of Technical Papers, 266-267 (1994).
Reza Moazzami et al., "A Ferroelectric Dram Cell for High Density Nvrams," 1990 Symposium on VLSI Technology, 15-17 (1990).
Tatsumi Sumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns," Digest of Technical Papers, 268-269 (1994).
Micro)n Technology, Inc.
Popek Joseph A.
LandOfFree
Ferroelectric memory using ferroelectric reference cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory using ferroelectric reference cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory using ferroelectric reference cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-770442