Method and apparatus for lithographic rotate and repeat processi

Details Method and apparatus for lithographic rotate and repeat processi Method and apparatus for lithographic rotate and repeat processi

1984-01-24

1986-09-23

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Lithography

2504921, G21K 500

Patent

active

046139818

ABSTRACT:
An X-ray lithography apparatus permits the successive exposure of each of four quadrants of a semiconductor wafer through a single mask. The mask overlays one quadrant of the wafer at a time and the wafer is rotated through 90 degrees after exposure of a quadrant to allow exposure of succeeding wafer quadrants; each wafer quadrant is independently aligned to the mask prior to exposure. In an alternative preferred embodiment, a rotatable diaphragm is used to select a single mask quadrant from a mask which overlays the entire surface of the semiconductor wafer. Both the wafer and the diaphragm may be rotated to allow various exposure combinations of mask and wafer quadrants.

REFERENCES:
patent: 3181419 (1965-05-01), Knaup et al.
patent: 3875416 (1975-04-01), Spicer
patent: 4260670 (1981-04-01), Burns
patent: 4385238 (1983-05-01), Westerberg et al.
patent: 4430571 (1984-02-01), Smith et al.

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