Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-18
1999-10-26
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, H01L 29792
Patent
active
059733799
ABSTRACT:
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (15) of ferroelectric material disposed on a semiconductor substrate (11) and a gate structure (27) formed on the semiconductor substrate (11). A source region (23) and a drain region (24) are formed on the semiconductor substrate such that the source region (23) and the drain region (24) are laterally spaced apart from the gate structure (27).
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patent: 5767543 (1998-06-01), Ooms et al.
patent: 5846847 (1998-12-01), Ooms et al.
Hallmark Jerald A.
Ooms William J.
Atkins Robert D.
Hardy David B.
Koch William E.
Motorola Inc.
Parker Lanny L.
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