Semiconductor device having FETs with shared source and drain re

Details Semiconductor device having FETs with shared source and drain re Semiconductor device having FETs with shared source and drain re

1996-12-27

1999-10-26

Nelms, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 48, H01L 2976

Patent

active

059733772

ABSTRACT:
The conventional semiconductor device having a switching function is attended with a problem that in addition to a drawback of a large area occupied by the folded structure of gate electrodes, there are not obtained sufficient effect in association with the minimization in the device size and improvement of the performance. A transmission line is connected to a shared electrode between a drain electrode of a first FET and a source electrode of a second FET. There are disposed a first shared electrode including a drain electrode of the second FET and a source electrode of a third FET and a second shared electrode including drain electrodes of the third and fourth FETs. The second shared electrode is connected to a transmission line. Gate electrodes of the first and fourth FETs and gate electrodes of the second, and third FETs are fabricated to have an identical orientation of the plane of substrate. Consequently, the area occupied by the switching circuit is reduced when compared with the configuration including gate electrodes in the folded contour.

REFERENCES:
patent: 4974059 (1990-11-01), Kinzer
patent: 5367187 (1994-11-01), Yuen
patent: 5479034 (1995-12-01), Hashimoto
patent: 5616940 (1997-04-01), Kato
patent: 5703381 (1997-12-01), Iwasa
Schindler, M.J., "DC-40 GHz and 20-40 GHz MMIC SPDT Switches", IEEE Transactions on Microwave Theory and Techniques,vol. MTT-35, No. 12, Dec. 1987, pp. 1486-1493.

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