MIS semiconductor device having body-contact region

Details MIS semiconductor device having body-contact region MIS semiconductor device having body-contact region

1998-09-18

1999-10-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257354, 257386, H01L 2701, H01L 2712, H01L 310392

Patent

active

059733640

ABSTRACT:
An SOI-type MISFET with a body contact has a Si active layer arranged on an insulating layer. A pair of source and drain regions interposing a main channel region are arranged in the active layer. An additional channel region and a body-contact region are also arranged in the active layer. A gate electrode is arranged to have first and second portions facing the main and additional channel regions, respectively, through a gate insulating film. A main MIS capacitor and a parasitic MIS capacitor are formed under the first and second portions of the gate electrode, respectively. The additional channel region is doped with an impurity under a condition different from that of the main channel region such that electrical charges necessary for charging and discharging the parasitic MIS capacitor are decreased, in an operation voltage range of the device.

REFERENCES:
patent: 5206533 (1993-04-01), Houston
patent: 5498882 (1996-03-01), Houston
patent: 5637899 (1997-06-01), Eimori et al.
patent: 5821575 (1998-10-01), Mistry et al.

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