Field effect-controllable semiconductor component

Details Field effect-controllable semiconductor component Field effect-controllable semiconductor component

1998-09-21

1999-10-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257401, H01L 2976

Patent

active

059733608

ABSTRACT:
The field effect-controllable semiconductor component has a drain zone of the first conductivity type and also at least one gate electrode which is composed of polycrystalline silicon and is insulated from the drain zone. A source region of the second conductivity type is introduced in the drain zone. In addition, there is formed in the drain zone a trench structure, which reach from the surface of the epitaxial layer down into the substrate layer. An additional field plate made of polysilicon and embedded in an oxide layer is introduced in the trench structure. The thickness of the oxide surrounding the field plate increases down in a direction towards the drain.

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patent: 5883411 (1999-03-01), Ueda et al.
Japanese Patent Abstract No. 60208863 (Hiroshi), dated Oct. 21, 1985.
"Siemens Technische Angaben", Semiconductor Group, pp. 28-65.

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