Single polycylindrical flash memory cell having high coupling ra

Details Single polycylindrical flash memory cell having high coupling ra Single polycylindrical flash memory cell having high coupling ra

1998-03-30

1999-10-26

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, H01L 29788

Patent

active

059733543

ABSTRACT:
A flash memory cell formed in a semiconductor substrate. The memory cell comprises: (a) a gate oxide formed atop said semiconductor substrate, said gate oxide including a thin region and a thick region; (b) a floating gate formed atop said thin region; (c) a control gate formed atop said thick region; (d) a drain region formed under said thin region and within said floating gate; (e) a source region formed under said thick region and outside said control gate; and (f) an insulating dielectric layer between said control gate and said floating gate.

REFERENCES:
patent: 5138373 (1992-08-01), Jeach
patent: 5390144 (1995-02-01), Susuki
patent: 5414286 (1995-05-01), Yamauchi
patent: 5414693 (1995-05-01), Ma et al.
patent: 5455790 (1995-10-01), Hart et al.
patent: 5633519 (1997-05-01), Yamazaki

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