Stacked capacitor structure for high density DRAM cells

Details Stacked capacitor structure for high density DRAM cells Stacked capacitor structure for high density DRAM cells

1998-04-14

1999-10-26

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, H01L 27108

Patent

active

059733500

ABSTRACT:
A structure of a capacitor on a semiconductor wafer including the following structure is disclosured herein. A first electrode is formed on the semiconductor wafer. The first electrode includes a flower structure. The first electrode is formed on the semiconductor wafer. The first electrode includes a flower structure. The first electrode includes a flower neck portion, a flower bottom portion, and a flower top portion. The flower neck portion is electrically coupled to the semiconductor wafer. The flower bottom portion is electrically coupled to the flower neck portion, in which the flower bottom portion includes a first protudent portion. The flower top portion includes a downward hemispherical portion and a second protrude portion. The flower top portion is electrically coupled to the flower neck portion. A first dielectric film formed on the first electrode, and the first dielectric layer is the dielectric layer of the capacitor. A second electrode is formed on the first dielectric film.

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