Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-12
1999-10-26
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257774, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059733489
ABSTRACT:
In a semiconductor device constituted using a borderless contact technique, for example, when a wiring layer with a damascene structure is connected to its underlying contact portion, a trench connecting with the contact portion is formed in the second interlayer insulation film. After that, the contact portion protruded from the bottom of the trench is selectively etched to flatten the bottom of the trench to remove a very small recess from that bottom of the trench which corresponds to a contact face between the contact portion and wiring layer. Thus, both a barrier metal layer and a metal layer for forming the wiring layer can be formed in the trench with higher reliability and accordingly the wiring layer and contact portion can be brought into reliable contact with each other. In a DRAM using a simple stacked capacitor, the storage electrode and plug portion can be put into reliable contact with each other.
REFERENCES:
patent: 5444013 (1995-08-01), Akam et al.
patent: 5497017 (1996-03-01), Gonzales
patent: 5569948 (1996-10-01), Kim
patent: 5619072 (1997-04-01), Mehta
patent: 5625232 (1997-04-01), Numata et al.
patent: 5723910 (1998-03-01), Kariyazono et al.
Kabushiki Kaisha Toshiba
Meier Stephen D.
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