Semiconductor memory device having bit line directly held in con

Details Semiconductor memory device having bit line directly held in con Semiconductor memory device having bit line directly held in con

1996-04-18

1999-10-26

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257306, H01L 27108, H01L 2976

Patent

active

059733438

ABSTRACT:
Two n-channel enhancement type switching transistors are fabricated on an active area in such a manner as to share a common drain region, and gate electrodes are encapsulated in insulating wall structures defining a contact hole over the common drain region so as to allow a bit line to be directly held in contact through the contact hole with the common drain region.

REFERENCES:
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5153689 (1992-10-01), Okumura et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5237187 (1993-08-01), Suwanai et al.
patent: 5396094 (1995-03-01), Matsuo
patent: 5486712 (1996-01-01), Arima

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