Semiconductor device having an iridium electrode

Details Semiconductor device having an iridium electrode Semiconductor device having an iridium electrode

1998-07-06

1999-10-26

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257535, 257769, H01L 2976, H01L 2900, H01L 2348

Patent

active

059733420

ABSTRACT:
An iridium layer (16) is formed on an inter-layer insulation film (12) and in an opening (14). The iridium layer (16) is constituted with a part to be a lower electrode (16a) of a capacitor and a part to be a wiring (16b) for coming into contact with a drain zone (6). On part of the lower electrode (16a) of the iridium layer (16) is formed a ferroelectric layer (18) made of PZT on which is further formed an iridium layer (20) as an upper electrode. Since the melting point of iridium is higher than that of aluminum, there is no possibility of iridium melting even if heat treatment is carried out after forming the iridium layer (16). Since reactivity between iridium and silicon is low, unnecessary silicon compound is not produced on the interface to provide favorable contact.

REFERENCES:
patent: 4026742 (1977-05-01), Fujino
patent: 5070379 (1991-12-01), Nomoto et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5486713 (1996-01-01), Koyama
patent: 5510651 (1996-04-01), Maniar et al.
patent: 5555486 (1996-09-01), Kingon et al.

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