Method of forming a high surface area interconnection structure

Details Method of forming a high surface area interconnection structure Method of forming a high surface area interconnection structure

1995-02-28

1998-10-06

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438645, 438648, 438672, 438687, H01L 214763

Patent

active

058175741

ABSTRACT:
A novel, high performance, high reliability interconnection structure for an integrated circuit. The interconnection structure of the present invention is formed on a first insulating layer which in turn is formed on a silicon substrate or well. A first multilayer interconnection comprising a first aluminum layer, a first refractory metal layer, and a second aluminum layer is formed on the first insulating layer. A second insulating layer is formed over the first multilayer interconnection. A conductive via is formed through the second insulating layer and recessed into the first multilayer interconnection wherein a portion of the via extends above the second insulating layer. A second interconnection is formed on the second insulating layer and on and around the portion of the via extending above the second insulating layer.

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