Method of making thin film transistor using lateral crystallizat

Details Method of making thin film transistor using lateral crystallizat Method of making thin film transistor using lateral crystallizat

1996-01-03

1997-06-10

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438479, 438486, 438166, H01L 21265, H01L 2184

Patent

active

056375158

ABSTRACT:
A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the grain boundary does not exist around the interface between the drain and the channel formation region. At this interface, a large stress is induced by a large electric field. The concentration of the metal element is low around the interface between the drain and the channel formation region. Therefore, the leakage voltage is small. Also, when a reverse voltage is applied to the gate electrode, the leakage current is small.

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