Method for chemical-mechanical planarization of a substrate on a

Details Method for chemical-mechanical planarization of a substrate on a Method for chemical-mechanical planarization of a substrate on a

1996-10-18

1999-10-26

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438633, 438692, 216 88, 216100, H01L 21302

Patent

active

059727926

ABSTRACT:
A method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad in which a planarizing solution is dispensed onto the fixed-abrasive polishing pad. The planarizing solution is preferably an abrasive-free planarizing solution that oxidizes a surface layer on the substrate without passing the surface layer into solution, and the fixed-abrasive pad has a substantially uniform distribution of abrasive particles fixedly bonded to a suspension medium. The surface layer of the substrate is then pressed against the fixed-abrasive pad in the presence of planarizing solution, and at least one of the fixed-abrasive pad or the substrate moves relative to the other to remove material from the surface of the substrate. In operation, the planarizing solution forms a rough, scabrous layer of non-soluble oxides on the surface layer that are readily removed by the abrasive surface of the polishing pad. In one embodiment of the invention, the pH of the planarizing solution is controlled to oxidize the material of the surface layer without passing it into solution.

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