Thin film forming apparatus and method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438458, 438459, H01L 2130, H01L 2146

Patent

active

059727802

ABSTRACT:
A thin film forming apparatus includes a specimen holder on which a substrate for thin film formation is placed, a transfer plate opposing the specimen holder, on which a sheet film having a thin film formed on a surface is placed, a thin film forming chamber comprising the specimen holder and the transfer plate, a pressure unit for moving at least one of the specimen holder and the transfer plate and pressing the specimen holder against the transfer plate for a predetermined time while the substrate and the thin film formed on the sheet film are in contact with each other, a heating unit for heating the substrate at a predetermined temperature, and an exhausting unit for vacuum-exhausting the thin film forming chamber.

REFERENCES:
patent: 5273938 (1993-12-01), Lin et al.
patent: 5286335 (1994-02-01), Drabik et al.
patent: 5324687 (1994-06-01), Wojnarowski
patent: 5374564 (1994-12-01), Bruel
patent: 5387551 (1995-02-01), Mizoguchi et al.
patent: 5656548 (1997-08-01), Zavracky et al.
K. Sato, S. Harada, A. Saiki, T. Kitamura, T. Okubo, and K. Mukai, "A Novel Planar Multilevel Interconnection Technology Utilizing Polymide", IEEE Trans. Part Hybrid Package., PHP-9, 176 (1973).
P. Elikins, K. Reinhardt, and R. Layer, "A planarization process for double metal CMOS using Spin-on Glass as a sacrficial layer," Proceeding of 3rd International IEEE VMIC Conf., 100 (1986).
K. Ehara, T. Morimoto, S. Muramoto, and S. Matsuo, "Planar Interconnection Technology for LSI Fabrication Utilizating Lift-off Process", J.Electochem Soc., vol. 131, No. 2,419 (1984).
C. Y. Ting, V. J. Vivalda, and H. G. Schaefer, "Study of Planarized Sputter-Deposited-SiO.sub.2 ", J. Vac. Sci. Technol. 15, 1105(1978).
K. Machida and H. Oikawa, "SiO.sub.2 Planarization Technology With Biasing and Electron Cyclotoron Resonance Plasma Deposition for Submicron Interconnections", J. Vac. Sci. Technol. B4, 818 (1986).
W. J. Patrick, W. L. Guthrie, C. L. Standley, P. M. Schiable, "Application of Chemical Mechanical Polishing to the Fabrication of VSLI Circuit Interconnections", J. Electrochem. Soc., vol. 138, No. 6, Jun., 1778 (1991).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film forming apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film forming apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming apparatus and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-763577

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.