Method of forming isolation by nitrogen implant to reduce bird's

Details Method of forming isolation by nitrogen implant to reduce bird's Method of forming isolation by nitrogen implant to reduce bird's

1997-07-23

1999-10-26

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438443, H01L 21762

Patent

active

059727772

ABSTRACT:
A new method of local oxidation using nitrogen implant to reduce the growth of a bird's beak is described. An oxide layer is provided over the surface of a semiconductor substrate. A first silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the first silicon nitride layer to the oxide layer where the device isolation region is to be formed. Nitrogen ions are implanted through the oxide layer to form a nitrogen implanted area within the semiconductor substrate within the opening. A second silicon nitride layer is deposited overlying the first silicon nitride layer and the oxide layer within the opening. The second silicon nitride layer is etched away to leave spacers on the sidewalls of the first silicon nitride layer. The oxide layer and the nitrogen implanted area of the semiconductor substrate within the opening are etched away where they are not covered by the spacers. The semiconductor substrate within the opening is oxidized wherein the device isolation region is formed and whereby the nitrogen implanted region underlying the spacers reduces the growth of a bird's beak. The remaining oxide layer, first silicon nitride layer, and spacers are removed completing the fabrication of a device isolation region of an integrated circuit.

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VLSI Technology, International Edition, by SMSZE, McGraw-Hill Book Co. pp. 473-474.

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