Microwave plasma chemical vapor deposition process using a micro

Details Microwave plasma chemical vapor deposition process using a micro Microwave plasma chemical vapor deposition process using a micro

1995-01-20

1997-06-10

Bueker, Richard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

118723ME, C23C 1600

Patent

active

056373589

ABSTRACT:
In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.

REFERENCES:
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patent: 4785763 (1988-11-01), Saitoh
patent: 5030476 (1991-07-01), Okamura et al.
Kato, et al. "High-Rate Deposition of a-Si:H Using Electron Cyclotron Resonance Plasma," Journal of Non-Crystalline Solids 77 & 78 (1985 pp. 813-816).
Webster's New Collegiate Dictionary .COPYRGT. 1975, G & C Merriam Co., Springfield Mass, p. 244.

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