Silicon IC contacts using composite TiN barrier layer

Details Silicon IC contacts using composite TiN barrier layer Silicon IC contacts using composite TiN barrier layer

1997-09-30

1999-10-26

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427252, 427576, 427535, 438680, 438653, 438627, 438648, 20419215, C23C 1414

Patent

active

059721790

ABSTRACT:
The specification describes a composite TiN barrier layer structure formed by depositing a first TiN layer by CVD to obtain good step coverage, followed by a second TiN layer formed by PVD to obtain uniform surface morphology for subsequent deposition of an aluminum alloy contact layer. Alternatively, uniform TiN layer morphology is obtained by depositing multiple CVD TiN layers as a series of thin strata, and passivating after each deposition step to fully crystallize each stratum thereby obtaining a uniformly crystallized barrier layer.

REFERENCES:
patent: 5232871 (1993-08-01), Ho
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5712193 (1998-01-01), Hower et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.
patent: 5780356 (1998-07-01), Kim

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