Sputtering apparatus, device for exchanging target and method fo

Details Sputtering apparatus, device for exchanging target and method fo Sputtering apparatus, device for exchanging target and method fo

1990-11-21

1995-07-04

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429809, 20429819, 20429822, 20429826, C23C 1434

Patent

active

054297290

ABSTRACT:
In accordance with the present invention, in order to exchange a target under a vacuum condition without communicating a film-forming chamber with the atmosphere for exchange of the target, a substrate is located in a vacuum vessel and an opening portion is provided on a wall surface of the vacuum vessel opposite to the substrate which is formed with a thin film on its surface. A target exchanging chamber is disposed adjacent to the vacuum vessel so as to be communicated therewith through the opening portion. During film-formation, the interior of the vacuum vessel is maintained in a vacuum state by closing the opening portion with the target while the target exchanging chamber is communicated with the atmosphere and a spare target is contained therein. When exchanging the target, the air in the target exchanging chamber is exhausted to maintain the chamber in a vacuum state and the target is replaced with the spare target.

REFERENCES:
patent: 3521765 (1970-07-01), Kaufman et al.
patent: 4274936 (1981-06-01), Love
patent: 4299678 (1981-11-01), Meckel
patent: 4415427 (1983-11-01), Hidler et al.
patent: 4547279 (1985-10-01), Kiyota et al.
patent: 4674621 (1987-06-01), Takahashi
patent: 4749465 (1988-06-01), Flint et al.
J. Vossen et al., "Thin Film Processes", Academic Press, 1978, pp. 41-42.

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