Semiconductor device having a ferroelectric film in a through-ho

Details Semiconductor device having a ferroelectric film in a through-ho Semiconductor device having a ferroelectric film in a through-ho

1993-10-19

1994-11-29

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 365145, 3613212, H01L 2978, G11C 1122

Patent

active

053692969

ABSTRACT:
In a memory construction using ferroelectric film, by embedding a capacitor formed by said ferroelectric film in a through hole bored in an interlayer insulating film formed on a semiconductor substrate, reliability of the wiring layer passing thereover so as to obtain a highly reliable semiconductor memory by reducing the step difference by said capacitor.

REFERENCES:
patent: 4149302 (1979-04-01), Cook
patent: 5046043 (1991-09-01), Miller et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5119154 (1992-06-01), Gnadinger
patent: 5216572 (1993-06-01), Larson et al.

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