Substrate structure of semiconductor device and method of manufa

Details Substrate structure of semiconductor device and method of manufa Substrate structure of semiconductor device and method of manufa

1983-08-22

1987-04-21

Edlow, Martin H.

357 55, H01L 2712

Patent

active

046600680

ABSTRACT:
A substrate structure utilized to fabricate a semiconductor device is constituted by a silicon substrate; an element region selectively formed on the silicon substrate and a relatively thick field oxide region formed adjacent to the element region; an element isolating region formed between the element region and the field oxide region, the element isolating region being in direct contact with the field oxide region; the element isolating region being provided with a relatively deep groove formed in the silicon substrate and having a relatively small width; a silicon oxide insulating film formed on the inner wall of the groove; and a silicon nitride insulating film disposed on the silicon oxide insulating film. The surfaces of the element region, the element isolating region and the field oxide region on the silicon substrate are formed substantially flat.

REFERENCES:
patent: 4331708 (1982-05-01), Hunter
patent: 4502913 (1985-03-01), Lechaton et al.
patent: 4509249 (1985-04-01), Goto et al.

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