Method of patterning polysilicon

Details Method of patterning polysilicon Method of patterning polysilicon

1975-05-12

1976-04-13

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 148187, 357 91, H01L 21265

Patent

active

039501884

ABSTRACT:
A semiconductor substrate is coated with an insulating film followed by a layer of polysilicon. The polysilicon layer is coated with a non-oxidizable mask, such as silicon nitride, and then oxidized to convert the exposed regions to silicon oxide and add further thickness to the converted oxide regions. When the mask is removed, the thicker silicon oxide regions serve as an in situ mask for selectively implanting impurity ions through the thinner polysilicon regions and into the semiconductor substrate. When the silicon oxide regions are etched away, the remaining polysilicon regions serve as an ion implantation mask for permitting selective ion implantation through the voids left by etching the silicon oxide regions.

REFERENCES:
patent: 3576478 (1971-04-27), Watkins et al.
patent: 3736193 (1973-05-01), Tucker et al.
patent: 3756861 (1973-09-01), Payne et al.
patent: 3793088 (1974-02-01), Eckton et al.
patent: 3852119 (1974-12-01), Gosney et al.
patent: 3865652 (1975-02-01), Agusta et al.
patent: 3873371 (1975-03-01), Wolf

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