Plasma etching of refractory metals and their silicides

Details Plasma etching of refractory metals and their silicides Plasma etching of refractory metals and their silicides

1985-05-03

1987-04-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 156662, 20419232, 252 791, H01L 21306, C23F 102, B44C 122, C03C 1500

Patent

active

046594264

ABSTRACT:
Refractory metals, refractory metal silicide, and polysilicon/refractory metal silicide sandwich structures integrated circuits are etched using carbonyl chemistry. That is, the deposited material is plasma etched using an etchant gas mixture which contains a gas, such as CO2, which can dissociate to provide carbonyl groups (CO) or, in combination with halogen sources, carbonyl halide radicals.

REFERENCES:
patent: 4243476 (1981-01-01), Ahn et al.
patent: 4260649 (1981-04-01), Dension et al.
patent: 4444617 (1984-04-01), Whitcomb
patent: 4473436 (1984-09-01), Beinvogl
patent: 4529475 (1985-07-01), Okano et al.

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