Trench isolator structure in an integrated circuit

Details Trench isolator structure in an integrated circuit Trench isolator structure in an integrated circuit

1994-10-31

1995-07-25

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257513, H01L 2712

Patent

active

054364884

ABSTRACT:
The reliability of integrated circuits fabricated with trench isolation is improved by increasing the thickness of the gate dielectric overlying the trench corner. After the trench isolation region (40, 56) has been formed a thin layer of silicon dioxide (44) is chemically vapor deposited over the trench isolation region (44) and the adjacent active region (23). A transistor gate electrode (46) is subsequently formed over the thin layer of silicon dioxide (44). The thin layer of silicon dioxide (44) increases the thickness of the gate dielectric that lies between the transistor gate electrode (46) and the trench corner, and therefore the breakdown voltage of the gate dielectric at the trench corner is increased.

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