Electrically programmable integrated memory with only one transi

Details Electrically programmable integrated memory with only one transi Electrically programmable integrated memory with only one transi

1992-11-12

1995-07-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, H01L 2968, H01L 2978

Patent

active

054364795

ABSTRACT:
A novel electrically programmable and erasable memory cell, comprising a single transistor, which is a floating gate transistor and has no selection transistor. Means are provided for establishing a high capacitive coupling between the drain and the floating gate. The capacitive coupling between the source and the floating gate is low, as is normally the case. Preferably, the control gate only partly covers the floating gate. Another part of the floating gate is covered by a semiconductor layer connected to the drain. It is the latter layer which establishes the high capacitive coupling according to the invention. Programming can then take place by the Fowler-Nordheim effect with the source under high impedance, i.e. without hot electron effect.

REFERENCES:
patent: 4122544 (1978-10-01), McElroy
patent: 4361847 (1982-11-01), Harari
patent: 4475118 (1984-10-01), Klein et al.
patent: 4860256 (1989-08-01), Devin et al.
patent: 4947375 (1990-08-01), Gaultier et al.
patent: 4958324 (1990-09-01), Devin
patent: 4964079 (1990-10-01), Devin
patent: 5058069 (1991-10-01), Gaultier et al.
patent: 5099451 (1992-03-01), Sourgen et al.
Bursky, "ISSCC", Electronic Design, vol. 32, No. 4, Feb. 1984, pp. 104-127.
T. Nozaki, et al., "A 1 Mbit EEPROM with MONOS Memory Cell for Semiconductor Disk Application", Proceedings of the Symposium on VLSI Circuits Honolulu IEEE, Sep. 7, 1990, pp. 101-102

Affiliated with

Also associated with

Rating

Electrically programmable integrated memory with only one transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable integrated memory with only one transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable integrated memory with only one transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-741409