Semiconductor memory device with high dielectric capacitor struc

Details Semiconductor memory device with high dielectric capacitor struc Semiconductor memory device with high dielectric capacitor struc

1994-06-17

1995-07-25

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257306, G11C 1122

Patent

active

054364779

ABSTRACT:
Transfer gate transistors are formed on a main surface of a semiconductor substrate. The transfer gate transistors have impurity regions for serving as source/drain regions. A first interlayer insulating film having a substantially flat upper surface is formed to cover the transfer gate transistors. The first interlayer insulating film is provided with contact holes reaching the impurity regions. Plugs are formed in the contact holes. Capacitors are only formed on the flat upper surface of the first interlayer insulating film. Lower electrodes of the capacitors and the plugs are electrically connected with each other through barrier layers. Thus, it is possible to improve capacitances of capacitors in a DRAM.

REFERENCES:
patent: 5043049 (1991-08-01), Takenaka
patent: 5046043 (1991-09-01), Miller et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
IDEM 91, "A Stacked Capacitor With (.sup.Ba.sub.x.sup.Sr.sub.1-x) For 256M Dram", pp. 823-826.

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