Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1995-12-21
1997-09-09
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Bad bit
365149, 365226, G11C 700
Patent
active
056663153
ABSTRACT:
In a reading/writing operation, a bit line pair group including a defective memory cell is replaced with a spare bit line pair group. Supply of a precharge potential to a bit line equalize circuit and a power supply interconnection of a sense amplifier is effected by an interconnection V.sub.BLn connected to ground for every bit line pair group. In the replacement of the bit line pair group, supply of a precharge potential to the bit line pair group is cut by a fuse element.
REFERENCES:
patent: 4666584 (1987-05-01), Okada et al.
patent: 5532965 (1996-07-01), Kenney
1993 IEEE International Solid-State Circuits Conference pp. 48-49.
Arimoto Kazutami
Tsukude Masaki
Mitsubishi Denki & Kabushiki Kaisha
Nelms David C.
Niranjan F.
LandOfFree
Semiconductor memory device having a redundancy function suppres does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having a redundancy function suppres, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a redundancy function suppres will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-74135