Semiconductor memory device having a redundancy function suppres

Static information storage and retrieval – Read/write circuit – Bad bit

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365149, 365226, G11C 700

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active

056663153

ABSTRACT:
In a reading/writing operation, a bit line pair group including a defective memory cell is replaced with a spare bit line pair group. Supply of a precharge potential to a bit line equalize circuit and a power supply interconnection of a sense amplifier is effected by an interconnection V.sub.BLn connected to ground for every bit line pair group. In the replacement of the bit line pair group, supply of a precharge potential to the bit line pair group is cut by a fuse element.

REFERENCES:
patent: 4666584 (1987-05-01), Okada et al.
patent: 5532965 (1996-07-01), Kenney
1993 IEEE International Solid-State Circuits Conference pp. 48-49.

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