Method for forming a narrow gap

Details Method for forming a narrow gap Method for forming a narrow gap

1976-02-02

1977-10-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29580, 148187, 156643, 156653, 156657, 156661, 156662, 427 85, 427 93, H01L 21306

Patent

active

040533492

ABSTRACT:
A method for forming a narrow gap in a material in which a first masking layer and a second masking layer are disposed on a layer of material and are selectively removed to expose a portion of the surface of the material. A third masking layer is then disposed on the material. The first and third layers and the material are then selectively etched to form such narrow gap. The portions of the material separated by the gap may be used as MOS integrated circuit gates and a gate may also be formed in the gap by first depositing an insulating layer in the gap and then filling the gap with a conductive material.

REFERENCES:
patent: 3810795 (1974-05-01), Troutman
patent: 3911560 (1975-10-01), Amelio et al.

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