Method for forming a silicon controlled rectifier

Details Method for forming a silicon controlled rectifier Method for forming a silicon controlled rectifier

1993-07-14

1994-11-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437 30, 437 44, H01L 21332

Patent

active

053690419

ABSTRACT:
A semiconductor controlled rectifier is disclosed herein. In a preferred embodiment, a first n-doped region 112 is formed in a p-doped semiconductor layer 126. A first n-well region 122 is formed within the first doped region 112. This well 122 extends through the region 112 and into the layer 126. A second n-doped region 114 is also formed in the layer 126. The second region 1114 is spaced from the first region 112. A second n-well 142 is formed in the layer 126 such that it partially overlaps the second region 114. A n-doped region 144 and a p-doped region 146 are each formed in the second n-well 142 and abut one another.

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