Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-07-25
1998-10-06
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 99, 117102, 117103, 117952, C30B 2502
Patent
active
058171754
ABSTRACT:
A semiconductor processing method of depositing a film on a substrate using an organometallic precursor, where the precursor comprises a coordination complex having a central linking atom and at least two ligands bonded thereto, at least one of the ligands including an organic species comprising a carbon atom having at least one hydrogen atom bonded thereto thereby defining a carbon-hydrogen bond of the species, includes, a) passing a feed material through a plasma generating location effective to induce the feed material into a plasma state; b) flowing the feed material from the plasma generating location, the feed material flowing from the plasma generating location comprising a gas in an activated metastable state; c) combining an organometallic precursor with the gas when the gas is in the activated metastable state to separate the organic species from the organometallic precursor coordination complex while leaving the carbon-hydrogen bond intact, the organometallic precursor being in a gaseous non-plasma state when combined with the activated metastable state gas; and d) passing the combined precursor and gas to a substrate under conditions effective to deposit a film on the substrate, the film comprising the central linking atom.
REFERENCES:
patent: 5576071 (1996-11-01), Sandhu
patent: 5607722 (1997-03-01), Vaartstra
Weber et al. Deposition of TiN using tetrakis(dimethylamido)-titanium in an electron resonance plasma process, Applied Physics Letters vol. 63 (3) pages 325-327, Jul. 19, 1993.
Intemann et al. "Film Properties of CVD Titanium Nitride Deposited with Organometallic Precursors at Low Pressure Using Inert Gases, Ammonia, or Remote Activation", Journal of the Electrochemical Society, vol. 140 No. 11 pp. 3215-3222, Nov. 1993.
Kunemund Robert
Micro)n Technology, Inc.
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