Method of manufacturing a semiconductor device by means of plasm

Details Method of manufacturing a semiconductor device by means of plasm Method of manufacturing a semiconductor device by means of plasm

1983-10-31

1988-01-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 20419237, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

047174471

ABSTRACT:
A method of manufacturing a semiconductor device in which a layer of silicon nitride overlying a silicon oxide layer present on a substrate is etched by bringing it into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine, or of a compound containing a halogen different from fluorine, is added to this gas or gas mixture containing fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained which does not vary during etching.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger
patent: 4226665 (1980-10-01), Mogab
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4450042 (1984-05-01), Purdes

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device by means of plasm does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device by means of plasm, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device by means of plasm will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-7368