Method of making a semiconductor memory device having a capacito

Details Method of making a semiconductor memory device having a capacito Method of making a semiconductor memory device having a capacito

1993-08-26

1995-08-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 218242

Patent

active

054380138

ABSTRACT:
A capacitor of a semiconductor memory device having a greater cell capacitance than a double-cylindrical capacitor and an improved method for manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate and then first and second material layers are formed on the first conductive layer. The first material and second material layers are patterned to form a composite pattern comprised of a precursory first material pattern and a second material pattern. The precursory first material pattern is anisotropically etched to form a first material pattern smaller than the second material pattern. Here, an undercut portion under the second material pattern is created. Then, the first conductive layer is anisotropically and partially etched to form a first conductive layer pattern having a groove defining a protruding stepped portion into an individual cell unit. After forming a first spacer on the sidewall of the first material pattern and a second spacer on the sidewall of the groove, the first conductive layer pattern is anisotropically etched to thereby form a double-cylindrical electrode. A double-cylindrical storage electrode can be simply manufactured so that the cell capacitance of a semiconductor memory device can be reliably enlarged.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5314835 (1994-05-01), Iguchi et al.
patent: 5330614 (1994-07-01), Ahm
patent: 5372965 (1994-12-01), Ryou

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