Power semiconductor device having gate structure in trench

Details Power semiconductor device having gate structure in trench Power semiconductor device having gate structure in trench

1993-04-29

1994-01-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257297, H01L 2978

Patent

active

052820181

ABSTRACT:
A power MOS semiconductor device, such as a vertical MOSFET, IGBT, and IPD, includes a body of semiconductor material having a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and formed in the first semiconductor layer to provide a channel, a third semiconductor layer having the first conductivity type and formed in the second semiconductor layer, a trench formed in the first semiconductor layer across the third and second semiconductor layers, a gate insulating film covering a surface of the trench and extending to a surface of the third semiconductor layer, a gate electrode layer provided on the gate insulating film, and a buried layer having the first conductivity type provided in the first semiconductor layer so as to be contiguous to a bottom of the trench.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
Yilmaz, `Comparison of Punch-Through & Non Punch-Through . . . ` 8095 IEEE Trans on Ind App, vol IA-22, #3, May/Jun. 1986 pp. 466-469.
Patent Abstracts of Japan, vol. 14, No. 18 (E-873) 3961, Jan. 16, 1990, "Vertical Field-Effect Transistor", 1-260860(A),Masami Sawada, Apr. 11, 1988.
"An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process," Daisuke Ueda, et al., 8093 IEEE Transactions on Electron Devices, ED-34, No. 4, Apr. 1987, pp. 926-930.
"Dielectrically Isolated Intelligent Power Switch," Yu Ohata et al., IEEE Proceedings of the IEEE 1987 Custom Integrated Circuits Conference, May 4-7, 1987, Portland, OR, pp. 443-446.
"Deep-Trench Power MOSFET With an Ron Area Product of 160 m.OMEGA..mm.sup.2," Daisuke Ueda, et al., International Electron Devices Meeting, Dec. 7-10, 1986, Los Angeles, CA, pp. 638-641.
"TDMOS--An Ultra-Low On-Resistance Power Transistor," Satyen Mukherjee et al., IEEE Transactions on Electron Devices, vol. 35, No. 12, Dec. 1988, New York, USA, p. 2459, VIB-6.

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