Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-11
2000-03-21
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, H01L 21302
Patent
active
06040244&
ABSTRACT:
A single sensor 19 simultaneously measures the thickness and contour of a polishing pad 3 before and after polishing to determine changes in the thickness and contour of the polishing pad 3 caused by polishing. Based on these changes, a reproduction signal for pad reproduction or a replacement signal for pad replacement is output from a controlling means 13 to enable the surface accuracy of the polishing pad to be efficiently controlled.
REFERENCES:
patent: 5081051 (1992-01-01), Mattingly et al.
patent: 5609718 (1997-03-01), Meikle
patent: 5618447 (1997-04-01), Sandhu
patent: 5738562 (1998-04-01), Doan et al.
patent: 5743784 (1998-04-01), Birang et al.
patent: 5801066 (1998-09-01), Meikle
patent: 5834377 (1998-11-01), Chen et al.
Arai Hatsuyuki
Ikeyama Yasushi
Deo Duy-Vu
Kelly Michael K.
Speedfam Co., Ltd.
Utech Benjamin L.
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