Method of avoiding sidewall residue in forming connections

Details Method of avoiding sidewall residue in forming connections Method of avoiding sidewall residue in forming connections

1998-02-11

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438303, 438305, 438592, H01L 21336

Patent

active

060402415

ABSTRACT:
The method in the present invention for forming insulation over conductor includes the following steps. At first, a substrate with a first conductor formed over is provided. The first conductor can be either a gate structure or an interconnection layer. A dielectric layer is then formed over the first conductor the substrate. A portion of the dielectric layer is removed for having a recess free sidewall on the dielectric layer around the first conductor. An insulation for succeeding conductive layer is formed.

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