Method for forming interconnection structure

Details Method for forming interconnection structure Method for forming interconnection structure

1999-04-28

2000-03-21

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438633, 438660, 438687, H01L 2144

Patent

active

060402407

ABSTRACT:
Disclosed herein is a method for forming a copper interconnect in which a substrate having the copper interconnect is exposed to atmosphere after the substrate is cooled to a temperature below 160.degree. C. under a non-oxidizable atmosphere. The exposure of the substrate to a relatively high temperature conventionally makes an electric resistance between interconnects on the substrate higher to prevent high integration. In accordance with the present invention, the above electric resistance can be reduced to smoothly realize the high integration because of the exposure of the substrate to a relatively low temperature.

REFERENCES:
patent: 5354712 (1994-10-01), Ho et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5763953 (1998-06-01), Iljima et al.
patent: 5913147 (1999-06-01), Dubin et al.
patent: 5959358 (1999-09-01), Lanford et al.
patent: 5990005 (1999-11-01), Hirose et al.
Braeckelman, G., et al., "Deposition of barrier layer and CVD copper under no exposed wafer conditions: adhesion performance and process integration," Materials for Advanced Metallization, Mar. 16-19, 1997, pp. 27-29.
Ueno, K., et al., "Uniform (111) Textured Cu CVD on Vacuum Anneated Cu Seed Layer," Interconnect Technology Conference, Jun. 1-3, 1998, Proceedings of the IEEE International, pp. 119-121.

Affiliated with

Also associated with

Rating

Method for forming interconnection structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming interconnection structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming interconnection structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-730169