Semiconductor device having a short gate length

Details Semiconductor device having a short gate length Semiconductor device having a short gate length

1993-04-23

1994-01-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 40, 257496, H01L 2920, H01L 2922

Patent

active

052818390

ABSTRACT:
A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.

REFERENCES:
patent: 4994872 (1991-02-01), Nishizawa et al.
A. Hartstein et al., "A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length", Journal of Applied Physics Communications, vol. 68, No. 5, 1 Sep. 1990, New York, pp. 2493-2495.

Affiliated with

Also associated with

Rating

Semiconductor device having a short gate length does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a short gate length, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a short gate length will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-729872