Semiconductor memory device having cross-point DRAM cell structu

Details Semiconductor memory device having cross-point DRAM cell structu Semiconductor memory device having cross-point DRAM cell structu

1991-05-23

1994-01-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257302, 257310, 257379, 365149, 365182, H01L 27108, H01L 2976, H01L 2994, G11C 1124

Patent

active

052818373

ABSTRACT:
For providing a semiconductor memory device that includes a plurality of cross-point memory cells each having a fine device structure and a high capacitance, a bit line is formed on an insulating substrate, and a word line is disposed above the substrate so as to cross the bit line. A MOS transistor with a vertical structure, whose gate electrode is used as the word line, is provided on the bit line. A MIM (Metal-Insulator-Metal) capacitor is provided on the MOS transistor.

REFERENCES:
patent: 3305394 (1967-02-01), Kaiser et al.
patent: 4630088 (1986-12-01), Ogura et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 4970564 (1990-11-01), Kimura et al.
patent: 4974060 (1990-11-01), Ogasawara
patent: 4984038 (1991-01-01), Sunami et al.
patent: 5136534 (1992-08-01), McDavid et al.

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