Semiconductor superlattice structure

Details Semiconductor superlattice structure Semiconductor superlattice structure

1985-09-24

1987-06-23

Edlow, Martin H.

357 16, H01L 2712

Patent

active

046757082

ABSTRACT:
A light emitting diode, semiconductor laser or similar light emitting element, having an emission wavelength is 560 nanometers or less, that is implemented with only III-V compound semiconductors. The active layer of the light emitting element uses a semiconductor superlattice structure generated by periodically and repeatedly laminating a multi layer structure of different semiconductors. The structure comprises layers of A1P, GaP and InP, each layer being one of ten atomic layers thick.

REFERENCES:
patent: 4261771 (1981-04-01), Dingle
III-Binary and Quaternary Systems, pp. 42-45.
Molecular Beam Epitaxial Growth of InGaAIP on (100) GaAs, Asahi et al, J. Appl. Phys. 53(7), Jul 1982, pp. 4928-4931.
Electronics Letters, Mar. 3, 1983, vol. 19, No. 5, pp. 163-165 "0.66 .mu.m Room-Temperature Operation of InGaAIP DH Laser Diodes Grown by MBE".
"Modulated Semiconductor . . . Structure.sup.a),.sup.b)", Madhukar, J. Vac. Sci. Technol., 20(2), Feb. 1982, pp. 149-161.
"Electronic Structure . . . Superlattices.sup.a), Kim et al, J. Vac. Sci. Technol., 21(2), Jul./Aug. 1982, pp. 528-530.
"Band Structure . . . Superlattices", Schulman et al, Physical Review Letters, vol. 39, No. 26, Dec. 26, 1977, pp. 1680-1683.

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