Method for manufacturing thin film transistor for a liquid cryst

Details Method for manufacturing thin film transistor for a liquid cryst Method for manufacturing thin film transistor for a liquid cryst

1995-11-28

1998-01-20

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 46, 437158, H01L 2184

Patent

active

057100535

ABSTRACT:
A method for manufacturing a thin-film transistor includes forming a silicon pattern on a substrate; forming a gate insulating film by a thermal oxidization process or a deposition process; forming a gate pattern by depositing a gate electrode and a gate line; implanting ions into the substrate; forming an interlayer-insulating film; activating the implanted ions; forming a gate contact hole and source-drain contact holes; and forming a wiring pattern. The resultant thin-film transistor increases reliability of devices and yield by reducing breakdown voltage between the gate line and the silicon pattern and improving characteristics of the insulation-destruction.

REFERENCES:
patent: 5053345 (1991-10-01), Schnable et al.
patent: 5300449 (1994-04-01), Okumura
patent: 5482870 (1996-01-01), Inoue
patent: 5508216 (1996-04-01), Inoue

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