Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-27
1997-09-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257635, 257644, 257650, H01L 2976
Patent
active
056659954
ABSTRACT:
A ROM device with an array of cells has conductors formed in a substrate. Insulation is formed, and parallel conductors are formed orthogonally to the line regions, as thin as about 2000 .ANG.. Glass insulation having a thickness of about 3000 .ANG. or less, formed over the conductors is is reflowed. Contacts and a metal layer on the glass insulation are formed. Resist is patterned and used for etching the resist pattern in the metal. Removal of the second resist and device passivation with a layer having a thickness of about 1000 .ANG., precede activation of the impurity ions by annealing the device at less than or equal to about 520.degree. C. in a reducing gas atmosphere. After resist removal, a second resist is formed and exposed with a custom code pattern to form a mask. Ions are implanted into the substrate with a dosage of between about 1 E 14 and 3 E 14 atoms/cm.sup.2 with an energy of less than or equal to 200 keV adjacent to the conductors through the openings in the insulation.
REFERENCES:
patent: 5081052 (1992-01-01), Kobayashi et al.
Chung Chen-Hui
Hsue Chen-Chiu
Shev Shing-Ren
Su Kuan-Cheng
Prenty Mark V.
United Microelectronics Corporation
Wright William H.
LandOfFree
Post passivation programmed mask ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Post passivation programmed mask ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post passivation programmed mask ROM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-72118