Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-26
1997-09-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257382, 257383, 257384, 257476, 257485, H01L 27095
Patent
active
056659938
ABSTRACT:
A method for constructing a Schottky diode in an integrated circuit on a semiconductor substrate (18) includes forming a mask layer (22) over a region (12) of the semiconductor substrate which the Schottky diode is to be formed. First portions of said mask layer (22) are removed to expose first regions (11) of said substrate (18). At least one semiconductor processing step is performed prior to the formation of the Schottky diode, which has processing temperature above about 450.degree. C. in said first regions (11) of said substrate (18), such as forming TiSi.sub.2 (33-35) in portions of an FET device in the integrated circuit. A second portion of said mask layer (22) is removed to expose a second region (12) of said semiconductor substrate (18) at which said Schottky diode is to be formed, and a region (48) is formed in said semiconductor substrate (18) comprising a metal and a material of said semiconductor substrate (18) in said second region (12), such as platinum silicide. Additionally disclosed are techniques for forming contacts (139) to the Schottky diode (115) and other integrated circuit structures (107,108) at temperatures below those that would damage the Schottky diode (115).
REFERENCES:
patent: 4803539 (1989-02-01), Psaras et al.
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 5045916 (1991-09-01), Vor et al.
patent: 5064773 (1991-11-01), Feist
patent: 5334549 (1994-08-01), Eklund
patent: 5541134 (1996-07-01), Eklund
Keller Stephen A.
Shah Rajiv R.
Brady III W. James
Donaldson Richard L.
Mintel William
Swayze, Jr. W. Daniel
Texas Instruments Incorporated
LandOfFree
Integrated circuit including a FET device and Schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit including a FET device and Schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including a FET device and Schottky diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-72106