Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-31
1999-09-28
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438634, 438637, 438669, 438780, H01L 2102
Patent
active
059603160
ABSTRACT:
A method of fabricating an unlanded via over a polymer that is used as an intraline or intralayer dielectric is described. In one embodiment, the present invention creates an etch-stop layer for forming unlanded vias using three steps. A recess is created in an intraline dielectric, such as an organic polymer. An etch-stop layer is then deposited over the intraline dielectric. The etch-stop layer is then polished back before depositing a final insulating layer. The unlanded via is formed by etching through the final insulating layer. The intraline dielectric is protected by the etch-stop layer during the etch of the final insulating layer to form the unlanded via.
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Chaudhuri Olik
Eaton Kurt
Intel Corporation
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