Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-07
1999-09-28
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438634, 438637, H01L 214763
Patent
active
059603135
ABSTRACT:
A metal wire and a method for forming a metal wire of a semiconductor device, including the steps of forming an insulating layer and first etch-stop layer on a substrate forming a first trench having sidewalls and a bottom by selectively removing portions of said first etch-stop layer forming a second etch-stop layer on the insulating layer, including the first trench, and first-etch stop layer etching back said second etch-stop layer from within the trench to form a mask from said first and second etch-layers exposing a portion of the trench bottom, wherein the width of the mask has a width of less than the width of the trench bottom etching the insulating layer using said first and second etch-stop layers mask to form a second trench extending through the insulating layer for holding a contact plug removing said first and second etch-stop layers and forming a contact plug and conductive layer in said first and second trenches.
REFERENCES:
patent: 4466180 (1984-08-01), Scolof
patent: 5397731 (1995-03-01), Takemura
patent: 5635423 (1997-06-01), Huang et al.
patent: 5792704 (1998-08-01), Jun et al.
Dual Damascene: A ULSI Wiring Technology, Carter W. Kaanta, et al, IBM General Technology Division Essex Junction, Vernmont 05452, Jun. 11-12, 1991 VMIC COnference TH-0359-0/91/0000-0144, pp. 144-152.
International Electron Devices 1992, San Francisco, Ca. Dec. 13-16, 1992, Sponsored by Electron Devices Society of IEEE, pp. 2-6.
Lebentritt Michael S.
LG Semicon Co. Ltd.
Niebling John F.
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